NST857BDP6 Todos los transistores

 

NST857BDP6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NST857BDP6
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 420 W
   Tensión colector-emisor (Vce): 45 V
   Corriente del colector DC máxima (Ic): 0.1 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 220
   Paquete / Cubierta: SOT-963

 Búsqueda de reemplazo de transistor bipolar NST857BDP6

 

NST857BDP6 Datasheet (PDF)

 ..1. Size:93K  onsemi
nst857bdp6.pdf

NST857BDP6 NST857BDP6

NST857BDP6T5GDual General PurposeTransistorThe NST857BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat

 0.1. Size:121K  onsemi
nst857bdp6t5g.pdf

NST857BDP6 NST857BDP6

NST857BDP6T5GDual General PurposeTransistorThe NST857BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inwww.onsemi.comone package, this device is ideal for low-power surface mountapplication

 7.1. Size:90K  onsemi
nst857bf3.pdf

NST857BDP6 NST857BDP6

NST857BF3T5GPNP General PurposeTransistorThe NST857BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3

 7.2. Size:135K  onsemi
nst857amx2 nst857bmx2.pdf

NST857BDP6 NST857BDP6

DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose3Transistors1BASEPNP Silicon2NST857AMX2,EMITTERNST857BMX23Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant 2X2DFN3 (1.0 x 0.6 mm)CASE 714ACMAXIMUM RATINGS (TA = 25C unless otherwise noted)Rating Symbol Value UnitCollector-Emitter Voltage VCEO -45 VMARKING DIAGRAMC

 7.3. Size:156K  onsemi
nst857bf3t5g.pdf

NST857BDP6 NST857BDP6

NST857BF3T5GPNP General PurposeTransistorThe NST857BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at apremium. COLLECTOR3

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


NST857BDP6
  NST857BDP6
  NST857BDP6
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
Back to Top