NST857BDP6. Аналоги и основные параметры

Наименование производителя: NST857BDP6

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 420 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Статический коэффициент передачи тока (hFE): 220

Корпус транзистора: SOT-963

 Аналоги (замена) для NST857BDP6

- подборⓘ биполярного транзистора по параметрам

 

NST857BDP6 даташит

 ..1. Size:93K  onsemi
 nst857bdp6.pdf pdf_icon

NST857BDP6

NST857BDP6T5G Dual General Purpose Transistor The NST857BDP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount http //onsemi.com applicat

 0.1. Size:121K  onsemi
 nst857bdp6t5g.pdf pdf_icon

NST857BDP6

NST857BDP6T5G Dual General Purpose Transistor The NST857BDP6T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-963 six-leaded surface mount package. By putting two discrete devices in www.onsemi.com one package, this device is ideal for low-power surface mount application

 7.1. Size:90K  onsemi
 nst857bf3.pdf pdf_icon

NST857BDP6

NST857BF3T5G PNP General Purpose Transistor The NST857BF3T5G device is a spin-off of our popular SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It is designed for general purpose amplifier applications and is housed in http //onsemi.com the SOT-1123 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. COLLECTOR 3

 7.2. Size:135K  onsemi
 nst857amx2 nst857bmx2.pdf pdf_icon

NST857BDP6

DATA SHEET www.onsemi.com COLLECTOR General Purpose 3 Transistors 1 BASE PNP Silicon 2 NST857AMX2, EMITTER NST857BMX2 3 Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 Compliant 2 X2DFN3 (1.0 x 0.6 mm) CASE 714AC MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 V MARKING DIAGRAM C

ПОКАЗАТЬ ЕЩЁ

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