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NSTB1002 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSTB1002
   Código: U9
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-emisor (Vce): 40 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT553
 

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NSTB1002 Datasheet (PDF)

 0.1. Size:63K  onsemi
 nstb1002dxv5.pdf pdf_icon

NSTB1002

NSTB1002DXV5T1G,NSTB1002DXV5T5GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1The BRT (Bias Resistor Transistor) contains a single transistor with R2a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter

 0.2. Size:63K  onsemi
 nstb1002dxv5-d.pdf pdf_icon

NSTB1002

NSTB1002DXV5T1G,NSTB1002DXV5T5GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1The BRT (Bias Resistor Transistor) contains a single transistor with R2a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter

 7.1. Size:106K  onsemi
 nstb1005dxv5.pdf pdf_icon

NSTB1002

NSTB1005DXV5T1GDual CommonBase-Collector BiasResistor TransistorsNPN and PNP Silicon Surface Mounthttp://onsemi.comTransistors with Monolithic BiasResistor Network312The BRT (Bias Resistor Transistor) contains a single transistor withR1a monolithic bias network consisting of two resistors; a series base R2resistor and a base-emitter resistor. These digital transistors

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History: 2N322 | CMMT591

 

 
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