NSTB1002 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSTB1002
Código: U9
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-emisor (Vce): 40 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT553
Búsqueda de reemplazo de transistor bipolar NSTB1002
NSTB1002 Datasheet (PDF)
nstb1002dxv5.pdf
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NSTB1002DXV5T1G,NSTB1002DXV5T5GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1The BRT (Bias Resistor Transistor) contains a single transistor with R2a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter
nstb1002dxv5-d.pdf
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NSTB1002DXV5T1G,NSTB1002DXV5T5GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1The BRT (Bias Resistor Transistor) contains a single transistor with R2a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter
nstb1005dxv5.pdf
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NSTB1005DXV5T1GDual CommonBase-Collector BiasResistor TransistorsNPN and PNP Silicon Surface Mounthttp://onsemi.comTransistors with Monolithic BiasResistor Network312The BRT (Bias Resistor Transistor) contains a single transistor withR1a monolithic bias network consisting of two resistors; a series base R2resistor and a base-emitter resistor. These digital transistors
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