NSTB1002 Specs and Replacement

Type Designator: NSTB1002

SMD Transistor Code: U9

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT553

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NSTB1002 datasheet

 0.1. Size:63K  onsemi

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NSTB1002

NSTB1002DXV5T1G, NSTB1002DXV5T5G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias 31 2 Resistor Network R1 The BRT (Bias Resistor Transistor) contains a single transistor with R2 a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter... See More ⇒

 0.2. Size:63K  onsemi

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NSTB1002

NSTB1002DXV5T1G, NSTB1002DXV5T5G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias 31 2 Resistor Network R1 The BRT (Bias Resistor Transistor) contains a single transistor with R2 a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter... See More ⇒

 7.1. Size:106K  onsemi

 nstb1005dxv5.pdf pdf_icon

NSTB1002

NSTB1005DXV5T1G Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount http //onsemi.com Transistors with Monolithic Bias Resistor Network 31 2 The BRT (Bias Resistor Transistor) contains a single transistor with R1 a monolithic bias network consisting of two resistors; a series base R2 resistor and a base-emitter resistor. These digital transistors ... See More ⇒

Detailed specifications: NST846BF3T5G, NST847BDP6, NST847BF3T5G, NST847BPDP6T5G, NST848BF3T5G, NST856BF3T5G, NST857BDP6, NST857BF3T5G, 2SC2073, NSTB1005, P2N2222A, PCP1103, PCP1203, PZ3904, PZT651, PZT751, PZTA42

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