NSTB1005 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSTB1005
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT553
Búsqueda de reemplazo de NSTB1005
NSTB1005 Datasheet (PDF)
nstb1005dxv5.pdf

NSTB1005DXV5T1GDual CommonBase-Collector BiasResistor TransistorsNPN and PNP Silicon Surface Mounthttp://onsemi.comTransistors with Monolithic BiasResistor Network312The BRT (Bias Resistor Transistor) contains a single transistor withR1a monolithic bias network consisting of two resistors; a series base R2resistor and a base-emitter resistor. These digital transistors
nstb1002dxv5.pdf

NSTB1002DXV5T1G,NSTB1002DXV5T5GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1The BRT (Bias Resistor Transistor) contains a single transistor with R2a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter
nstb1002dxv5-d.pdf

NSTB1002DXV5T1G,NSTB1002DXV5T5GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1The BRT (Bias Resistor Transistor) contains a single transistor with R2a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter
Otros transistores... NST847BDP6 , NST847BF3T5G , NST847BPDP6T5G , NST848BF3T5G , NST856BF3T5G , NST857BDP6 , NST857BF3T5G , NSTB1002 , 2SC4793 , P2N2222A , PCP1103 , PCP1203 , PZ3904 , PZT651 , PZT751 , PZTA42 , PZTA92 .
History: CSC2120O | CD8550B | 2N3945 | IDB595 | BC849BW
History: CSC2120O | CD8550B | 2N3945 | IDB595 | BC849BW



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