NSTB1005 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSTB1005

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SOT553

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NSTB1005 datasheet

 0.1. Size:106K  onsemi
 nstb1005dxv5.pdf pdf_icon

NSTB1005

NSTB1005DXV5T1G Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount http //onsemi.com Transistors with Monolithic Bias Resistor Network 31 2 The BRT (Bias Resistor Transistor) contains a single transistor with R1 a monolithic bias network consisting of two resistors; a series base R2 resistor and a base-emitter resistor. These digital transistors

 7.1. Size:63K  onsemi
 nstb1002dxv5.pdf pdf_icon

NSTB1005

NSTB1002DXV5T1G, NSTB1002DXV5T5G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias 31 2 Resistor Network R1 The BRT (Bias Resistor Transistor) contains a single transistor with R2 a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter

 7.2. Size:63K  onsemi
 nstb1002dxv5-d.pdf pdf_icon

NSTB1005

NSTB1002DXV5T1G, NSTB1002DXV5T5G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias 31 2 Resistor Network R1 The BRT (Bias Resistor Transistor) contains a single transistor with R2 a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter

Otros transistores... NST847BDP6, NST847BF3T5G, NST847BPDP6T5G, NST848BF3T5G, NST856BF3T5G, NST857BDP6, NST857BF3T5G, NSTB1002, S9014, P2N2222A, PCP1103, PCP1203, PZ3904, PZT651, PZT751, PZTA42, PZTA92