NSTB1005 Datasheet and Replacement
Type Designator: NSTB1005
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT553
NSTB1005 Substitution
NSTB1005 Datasheet (PDF)
nstb1005dxv5.pdf

NSTB1005DXV5T1GDual CommonBase-Collector BiasResistor TransistorsNPN and PNP Silicon Surface Mounthttp://onsemi.comTransistors with Monolithic BiasResistor Network312The BRT (Bias Resistor Transistor) contains a single transistor withR1a monolithic bias network consisting of two resistors; a series base R2resistor and a base-emitter resistor. These digital transistors
nstb1002dxv5.pdf

NSTB1002DXV5T1G,NSTB1002DXV5T5GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1The BRT (Bias Resistor Transistor) contains a single transistor with R2a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter
nstb1002dxv5-d.pdf

NSTB1002DXV5T1G,NSTB1002DXV5T5GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1The BRT (Bias Resistor Transistor) contains a single transistor with R2a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter
Datasheet: NST847BDP6 , NST847BF3T5G , NST847BPDP6T5G , NST848BF3T5G , NST856BF3T5G , NST857BDP6 , NST857BF3T5G , NSTB1002 , 2SC4793 , P2N2222A , PCP1103 , PCP1203 , PZ3904 , PZT651 , PZT751 , PZTA42 , PZTA92 .
History: 2SA770 | SBT3904 | V405A | 2SA795B | SK3841 | 2N6232-4 | 2N6284
Keywords - NSTB1005 transistor datasheet
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History: 2SA770 | SBT3904 | V405A | 2SA795B | SK3841 | 2N6232-4 | 2N6284



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