NSTB1005 Datasheet and Replacement
Type Designator: NSTB1005
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT553
NSTB1005 Substitution
NSTB1005 Datasheet (PDF)
nstb1005dxv5.pdf

NSTB1005DXV5T1GDual CommonBase-Collector BiasResistor TransistorsNPN and PNP Silicon Surface Mounthttp://onsemi.comTransistors with Monolithic BiasResistor Network312The BRT (Bias Resistor Transistor) contains a single transistor withR1a monolithic bias network consisting of two resistors; a series base R2resistor and a base-emitter resistor. These digital transistors
nstb1002dxv5.pdf

NSTB1002DXV5T1G,NSTB1002DXV5T5GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1The BRT (Bias Resistor Transistor) contains a single transistor with R2a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter
nstb1002dxv5-d.pdf

NSTB1002DXV5T1G,NSTB1002DXV5T5GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1The BRT (Bias Resistor Transistor) contains a single transistor with R2a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: TED1402D | 3CG1980M | 2N4060 | 3CG1440 | 3CG4403 | DTL3422 | 3CG778A
Keywords - NSTB1005 transistor datasheet
NSTB1005 cross reference
NSTB1005 equivalent finder
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History: TED1402D | 3CG1980M | 2N4060 | 3CG1440 | 3CG4403 | DTL3422 | 3CG778A



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