NSTB1005 Specs and Replacement
Type Designator: NSTB1005
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT553
NSTB1005 Substitution
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NSTB1005 datasheet
NSTB1005DXV5T1G Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount http //onsemi.com Transistors with Monolithic Bias Resistor Network 31 2 The BRT (Bias Resistor Transistor) contains a single transistor with R1 a monolithic bias network consisting of two resistors; a series base R2 resistor and a base-emitter resistor. These digital transistors ... See More ⇒
NSTB1002DXV5T1G, NSTB1002DXV5T5G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias 31 2 Resistor Network R1 The BRT (Bias Resistor Transistor) contains a single transistor with R2 a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter... See More ⇒
NSTB1002DXV5T1G, NSTB1002DXV5T5G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias 31 2 Resistor Network R1 The BRT (Bias Resistor Transistor) contains a single transistor with R2 a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter... See More ⇒
Detailed specifications: NST847BDP6, NST847BF3T5G, NST847BPDP6T5G, NST848BF3T5G, NST856BF3T5G, NST857BDP6, NST857BF3T5G, NSTB1002, S9014, P2N2222A, PCP1103, PCP1203, PZ3904, PZT651, PZT751, PZTA42, PZTA92
Keywords - NSTB1005 pdf specs
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History: NJVMJD112G | TSC5904CX | BCW64 | 2SC646 | BC817K-25W | TSC873CW
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