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PZT651 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PZT651
   Código: 651_ZT651
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-emisor (Vce): 60 V
   Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 75 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT223 TO261
 

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PZT651 Datasheet (PDF)

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PZT651

PZT651NPN Silicon PlanarEpitaxial TransistorThis NPN Silicon Epitaxial transistor is designed for use inindustrial and consumer applications. The device is housed in theSOT-223 package which is designed for medium power surfacewww.onsemi.commount applications.SOT-223 package ensures level mounting, resulting in improvedSOT-223 PACKAGE HIGH CURRENTthermal conduction, and allo

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pzt651t1g.pdf pdf_icon

PZT651

PZT651NPN Silicon PlanarEpitaxial TransistorThis NPN Silicon Epitaxial transistor is designed for use inindustrial and consumer applications. The device is housed in theSOT-223 package which is designed for medium power surfacewww.onsemi.commount applications.SOT-223 package ensures level mounting, resulting in improvedSOT-223 PACKAGE HIGH CURRENTthermal conduction, and allo

Otros transistores... NST857BDP6 , NST857BF3T5G , NSTB1002 , NSTB1005 , P2N2222A , PCP1103 , PCP1203 , PZ3904 , 2SA1837 , PZT751 , PZTA42 , PZTA92 , PZTA96S , UMC3 , UMC5 , 2PA1576Q , 2PA1576R .

History: 2SC1326Z | 2N2907AHR | NPS3639

 

 
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