PZT651 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PZT651

Código: 651_ZT651

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-emisor (Vce): 60 V

Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 75 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: SOT223 TO261

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PZT651 datasheet

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 pzt651.pdf pdf_icon

PZT651

PZT651 NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface www.onsemi.com mount applications. SOT-223 package ensures level mounting, resulting in improved SOT-223 PACKAGE HIGH CURRENT thermal conduction, and allo

 0.1. Size:63K  onsemi
 pzt651t1g.pdf pdf_icon

PZT651

PZT651 NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface www.onsemi.com mount applications. SOT-223 package ensures level mounting, resulting in improved SOT-223 PACKAGE HIGH CURRENT thermal conduction, and allo

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