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BC847BVN . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BC847BVN
   Código: 13
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT666
 

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BC847BVN Datasheet (PDF)

 ..1. Size:136K  philips
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BC847BVN

DISCRETE SEMICONDUCTORS DATA SHEETM3D744BC847BVNNPN/PNP general purpose transistorProduct data sheet 2001 Nov 07Supersedes data of 2001 Aug 30NXP Semiconductors Product data sheetNPN/PNP general purpose transistor BC847BVNFEATURES PINNING 300 mW total power dissipationPIN DESCRIPTION Very small 1.6 mm x 1.2 mm ultra thin package1, 4 emitter TR1; TR2 Exce

 ..2. Size:201K  nxp
bc847bvn.pdf pdf_icon

BC847BVN

BC847BVNNPN/PNP general purpose transistor20 May 2019 Product data sheet1. General descriptionNPN/PNP transistor pair in a SOT666 plastic package.2. Features and benefits 300 mW total power dissipation Very small 1.6 mm x 1.2 mm ultra thin package Excellent coplanarity due to straight leads Replaces two SC-75/SC-89 packaged transistors on same PCB area Reduced

 ..3. Size:160K  diodes
bc847bvn.pdf pdf_icon

BC847BVN

BC847BVN COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Die Construction Case: SOT563 Two Internally Isolated NPN/PNP Transistors in One Package Case Material: Molded Plastic, Green Molding Compound. Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully Ro

 ..4. Size:1592K  jiangsu
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BC847BVN

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate TransistorsDUAL TRANSISTOR (NPN+PNP) BC847BVN SOT-563 FEATURES Epitaxial Die Construction Two isolated NPN/PNP(BC847W+BC857W) Transistors in one packageMAKING: KAWMAXIMUM RATINGS TR1 (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Em

Otros transistores... BC817W , BC846AT , BC846BT , BC846S , BC846T , BC846W , BC847BPN , BC847BV , 2SC828 , BC847T , BC847W , BC848W , BC856AT , BC856BT , BC856S , BC856W , BC857W .

History: BCX84 | MPQ4274

 

 
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