BFG25A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFG25A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.032 W

Tensión colector-base (Vcb): 8 V

Tensión colector-emisor (Vce): 5 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.0065 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5000 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT143B

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BFG25A datasheet

 0.1. Size:346K  philips
 bfg25aw x.pdf pdf_icon

BFG25A

DATA SHEET dbook, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors Product specification 1998 Sep 23 Supersedes data of August 1995 NXP Semiconductors Product specification BFG25AW; NPN 5 GHz wideband transistors BFG25AW/X FEATURES PINNING Low current consumption PIN DESCRIPTION lfpage 4 3 (100 Ato1mA) BFG25AW Low noise figure 1 collector G

 0.2. Size:117K  philips
 bfg25aw bfg25awx 3.pdf pdf_icon

BFG25A

DATA SHEET book, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors 1998 Sep 23 Product specification Supersedes data of August 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG25AW; BFG25AW/X FEATURES PINNING Low current consumption PIN DESCRIPTION fpage 4 3 (100 A to 1 mA) BFG25AW Low noise figure 1 collector

 0.3. Size:99K  philips
 bfg25ax.pdf pdf_icon

BFG25A

DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor 1997 Oct 29 Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X FEATURES DESCRIPTION Low current consumption NPN silicon wideband transistor in a (100 A to 1 mA) four-lead dua

Otros transistores... BCP68-25, BCP69-16, BCP69-25, BCW61B, BCW61C, BF820W, BF824W, BFG10W, TIP41C, BFG25AW, BFG310, BFG310W, BFG325, BFG325W, BFG410W, BFG424F, BFG424W