BFG25A Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG25A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.032 W
Maximum Collector-Base Voltage |Vcb|: 8 V
Maximum Collector-Emitter Voltage |Vce|: 5 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.0065 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 5000 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: SOT143B
BFG25A Transistor Equivalent Substitute - Cross-Reference Search
BFG25A Datasheet (PDF)
bfg25aw x.pdf
DATA SHEETdbook, halfpageM3D123BFG25AW; BFG25AW/XNPN 5 GHz wideband transistorsProduct specification 1998 Sep 23Supersedes data of August 1995NXP Semiconductors Product specificationBFG25AW;NPN 5 GHz wideband transistorsBFG25AW/XFEATURES PINNING Low current consumption PIN DESCRIPTIONlfpage4 3(100 Ato1mA)BFG25AW Low noise figure1 collector G
bfg25aw bfg25awx 3.pdf
DATA SHEETbook, halfpageM3D123BFG25AW; BFG25AW/XNPN 5 GHz wideband transistors1998 Sep 23Product specificationSupersedes data of August 1995Philips Semiconductors Product specificationNPN 5 GHz wideband transistors BFG25AW; BFG25AW/XFEATURES PINNING Low current consumptionPIN DESCRIPTIONfpage4 3(100 A to 1 mA)BFG25AW Low noise figure1 collector
bfg25ax.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG25A/XNPN 5 GHz wideband transistor1997 Oct 29Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFG25A/XFEATURES DESCRIPTION Low current consumption NPN silicon wideband transistor in a(100 A to 1 mA) four-lead dua
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BFJ50 | BCW21L | 2SD2107B
