BFG25A Datasheet. Specs and Replacement
Type Designator: BFG25A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.032 W
Maximum Collector-Base Voltage |Vcb|: 8 V
Maximum Collector-Emitter Voltage |Vce|: 5 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.0065 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 5000 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT143B
BFG25A Substitution
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BFG25A datasheet
DATA SHEET dbook, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors Product specification 1998 Sep 23 Supersedes data of August 1995 NXP Semiconductors Product specification BFG25AW; NPN 5 GHz wideband transistors BFG25AW/X FEATURES PINNING Low current consumption PIN DESCRIPTION lfpage 4 3 (100 Ato1mA) BFG25AW Low noise figure 1 collector G... See More ⇒
DATA SHEET book, halfpage M3D123 BFG25AW; BFG25AW/X NPN 5 GHz wideband transistors 1998 Sep 23 Product specification Supersedes data of August 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistors BFG25AW; BFG25AW/X FEATURES PINNING Low current consumption PIN DESCRIPTION fpage 4 3 (100 A to 1 mA) BFG25AW Low noise figure 1 collector ... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BFG25A/X NPN 5 GHz wideband transistor 1997 Oct 29 Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X FEATURES DESCRIPTION Low current consumption NPN silicon wideband transistor in a (100 A to 1 mA) four-lead dua... See More ⇒
Detailed specifications: BCP68-25, BCP69-16, BCP69-25, BCW61B, BCW61C, BF820W, BF824W, BFG10W, TIP41C, BFG25AW, BFG310, BFG310W, BFG325, BFG325W, BFG410W, BFG424F, BFG424W
Keywords - BFG25A pdf specs
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History: FC4228A | CHDTA143TUGP | CHDTA143TKGP | 2N5551SC
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