BFG310 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BFG310/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fre

BFG310W/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fr

DISCRETE SEMICONDUCTORS DATA SHEETBFG31PNP 5 GHz wideband transistorProduct specification 1995 Sep 12Supersedes data of November 1992NXP Semiconductors Product specificationPNP 5 GHz wideband transistor BFG31FEATURES PINNINGlfpage4 High output voltage capabilityPIN DESCRIPTION High gain bandwidth product1 emitter Good thermal stability2 base Gold

DISCRETE SEMICONDUCTORSDATA SHEETBFG31PNP 5 GHz wideband transistor1995 Sep 12Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationPNP 5 GHz wideband transistor BFG31FEATURES PINNING High output voltage capabilityPIN DESCRIPTIONpage4 High gain bandwidth product1 emitter