BFG310W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFG310W 📄📄
Código: A7*
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.06 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 6 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 14000 MHz
Ganancia de corriente contínua (hFE): 60
Encapsulados: CMPAK
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BFG310W datasheet
bfg310w xr.pdf
BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability 1.3 Applications Intended for Radio Fr
bfg310 xr.pdf
BFG310/XR NPN 14 GHz wideband transistor Rev. 01 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability 1.3 Applications Intended for Radio Fre
bfg31.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification 1995 Sep 12 Supersedes data of November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 FEATURES PINNING lfpage 4 High output voltage capability PIN DESCRIPTION High gain bandwidth product 1 emitter Good thermal stability 2 base Gold
Otros transistores... BCW61B, BCW61C, BF820W, BF824W, BFG10W, BFG25A, BFG25AW, BFG310, 2N2222, BFG325, BFG325W, BFG410W, BFG424F, BFG424W, BFG540, BFG540W, BFG541
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