BFG310W Todos los transistores

 

BFG310W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFG310W
   Código: A7*
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.06 W
   Tensión colector-base (Vcb): 15 V
   Tensión colector-emisor (Vce): 6 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.01 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 14000 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: CMPAK
 

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BFG310W Datasheet (PDF)

 ..1. Size:75K  philips
 bfg310w xr.pdf pdf_icon

BFG310W

BFG310W/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fr

 8.1. Size:74K  philips
 bfg310 xr.pdf pdf_icon

BFG310W

BFG310/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fre

 9.1. Size:209K  philips
 bfg31.pdf pdf_icon

BFG310W

DISCRETE SEMICONDUCTORS DATA SHEETBFG31PNP 5 GHz wideband transistorProduct specification 1995 Sep 12Supersedes data of November 1992NXP Semiconductors Product specificationPNP 5 GHz wideband transistor BFG31FEATURES PINNINGlfpage4 High output voltage capabilityPIN DESCRIPTION High gain bandwidth product1 emitter Good thermal stability2 base Gold

 9.2. Size:41K  philips
 bfg31 2.pdf pdf_icon

BFG310W

DISCRETE SEMICONDUCTORSDATA SHEETBFG31PNP 5 GHz wideband transistor1995 Sep 12Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationPNP 5 GHz wideband transistor BFG31FEATURES PINNING High output voltage capabilityPIN DESCRIPTIONpage4 High gain bandwidth product1 emitter

MOSTRAR MÁS

Otros transistores... BCW61B , BCW61C , BF820W , BF824W , BFG10W , BFG25A , BFG25AW , BFG310 , C1815 , BFG325 , BFG325W , BFG410W , BFG424F , BFG424W , BFG540 , BFG540W , BFG541 .

 

 
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