All Transistors. BFG310W Datasheet

 

BFG310W Datasheet and Replacement


   Type Designator: BFG310W
   SMD Transistor Code: A7*
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.06 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 6 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 14000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: CMPAK
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BFG310W Datasheet (PDF)

 ..1. Size:75K  philips
 bfg310w xr.pdf pdf_icon

BFG310W

BFG310W/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fr

 8.1. Size:74K  philips
 bfg310 xr.pdf pdf_icon

BFG310W

BFG310/XRNPN 14 GHz wideband transistorRev. 01 2 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.1.2 Features High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability1.3 Applications Intended for Radio Fre

 9.1. Size:209K  philips
 bfg31.pdf pdf_icon

BFG310W

DISCRETE SEMICONDUCTORS DATA SHEETBFG31PNP 5 GHz wideband transistorProduct specification 1995 Sep 12Supersedes data of November 1992NXP Semiconductors Product specificationPNP 5 GHz wideband transistor BFG31FEATURES PINNINGlfpage4 High output voltage capabilityPIN DESCRIPTION High gain bandwidth product1 emitter Good thermal stability2 base Gold

 9.2. Size:41K  philips
 bfg31 2.pdf pdf_icon

BFG310W

DISCRETE SEMICONDUCTORSDATA SHEETBFG31PNP 5 GHz wideband transistor1995 Sep 12Product specificationSupersedes data of November 1992File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationPNP 5 GHz wideband transistor BFG31FEATURES PINNING High output voltage capabilityPIN DESCRIPTIONpage4 High gain bandwidth product1 emitter

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