BFG424F Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFG424F
Código: NE*
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.135 W
Tensión colector-base (Vcb): 10 V
Tensión colector-emisor (Vce): 4.5 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 25000 MHz
Ganancia de corriente contínua (hFE): 50
Encapsulados: DFP4
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BFG424F datasheet
bfg424f.pdf
BFG424F NPN 25 GHz wideband transistor Rev. 01 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ha
bfg424w.pdf
BFG424W NPN 25 GHz wideband transistor Rev. 01 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ha
bfg425w.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification 2010 Sep 15 Supersedes data of 1998 Mar 11 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2base Emitter is thermal lead 3emitte
Otros transistores... BFG10W, BFG25A, BFG25AW, BFG310, BFG310W, BFG325, BFG325W, BFG410W, 2N5401, BFG424W, BFG540, BFG540W, BFG541, BFQ540, BFQ591, BFR505, BFR505T
History: DTA143ZKAFRA | BCW79-10
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