BFG424F Datasheet PDF and Equivalents Search

 ..1. Size:99K  philips

 bfg424f.pdf

BFG424F NPN 25 GHz wideband transistor Rev. 01 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ha... See More ⇒

 8.1. Size:97K  philips

 bfg424w.pdf

BFG424W NPN 25 GHz wideband transistor Rev. 01 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and ha... See More ⇒

 9.1. Size:143K  philips

 bfg425w.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product specification 2010 Sep 15 Supersedes data of 1998 Mar 11 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING Very high power gain PIN DESCRIPTION Low noise figure 1emitter High transition frequency 2base Emitter is thermal lead 3emitte... See More ⇒

 9.2. Size:90K  philips

 bfg425w 4.pdf

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 9.3. Size:1657K  kexin

 bfg425w.pdf

SMD Type Transistors NPN Transistors BFG425W (KFG425W) SOT-343R Unit mm 2.0 0.2 1.25 0.1 A X Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=4.5V 0 0.1 2.1 0.1 1.30(Typ) Very high power gain 3 4 Low noise figure 0.23 (max) 0.13 (min) High transition frequency 2 1 0.45(max) 0.35 0.05 0.60 0.1 0.1(max) 0.15(max... See More ⇒

 9.4. Size:872K  slkor

 bfg425w-tob.pdf

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 9.5. Size:210K  inchange semiconductor

 bfg425w.pdf

isc Silicon NPN RF Transistor BFG425W DESCRIPTION High Power Gain High Current Gain Bandwidth Product Low Noise Figure Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in RF wideband amplifiers and oscillators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 10 V CBO ... See More ⇒