BFG541 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETBFG541NPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFG541FEATURES PINNING High power gainPIN DESCRIPTION Low noise figure1 emitter High transition frequency2 basepage4 Gold metalliza

DISCRETE SEMICONDUCTORS DATA SHEETBFG540WBFG540W/X; BFG540W/XRNPN 9 GHz wideband transistorProduct specification 2000 May 23Supersedes data of 1997 Dec 04NXP Semiconductors Product specificationBFG540WNPN 9 GHz wideband transistorBFG540W/X; BFG540W/XRFEATURES MARKING High power gainTYPE NUMBER CODElfpage Low noise figure 4 3BFG540W N9 High transition

DISCRETE SEMICONDUCTORSDATA SHEETBFG540WBFG540W/X; BFG540W/XRNPN 9 GHz wideband transistorProduct specification 2000 May 23Supersedes data of 1997 Dec 04Philips Semiconductors Product specificationBFG540WNPN 9 GHz wideband transistorBFG540W/X; BFG540W/XRFEATURES MARKING High power gainTYPE NUMBER CODEfpage Low noise figure 4 3BFG540W N9 High transitio

BFG540; BFG540/X; BFG540/XRNPN 9 GHz wideband transistorRev. 05 21 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new lin

DISCRETE SEMICONDUCTORSDATA SHEETBFG540; BFG540/X; BFG540/XRNPN 9 GHz wideband transistorProduct specification 2000 May 23Supersedes data of 1997 Dec 03Philips Semiconductors Product specificationBFG540; BFG540/X;NPN 9 GHz wideband transistorBFG540/XRFEATURES PINNINGhandbook, 2 columns43 High power gainPIN DESCRIPTION Low noise figureBFG540 (Fig.1) Code: N

isc Silicon NPN RF Transistor BFG540DESCRIPTIONLow Noise FigureNF = 1.3 dB TYP.@V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP.21@V = 8 V,I = 40 mA,f = 900 MHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiersand linear broadband amplifiers.A

INCHANGE Semiconductorisc Silicon NPN RF Transistor BFG540DESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear bro

isc Silicon NPN RF Transistor BFG540/XDESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear broadband amplifiers.AB