BFG541 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG541
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.65 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 9000 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SC73
BFG541 Transistor Equivalent Substitute - Cross-Reference Search
BFG541 Datasheet (PDF)
bfg541.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG541NPN 9 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 9 GHz wideband transistor BFG541FEATURES PINNING High power gainPIN DESCRIPTION Low noise figure1 emitter High transition frequency2 basepage4 Gold metalliza
bfg540w wx wxr.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG540WBFG540W/X; BFG540W/XRNPN 9 GHz wideband transistorProduct specification 2000 May 23Supersedes data of 1997 Dec 04NXP Semiconductors Product specificationBFG540WNPN 9 GHz wideband transistorBFG540W/X; BFG540W/XRFEATURES MARKING High power gainTYPE NUMBER CODElfpage Low noise figure 4 3BFG540W N9 High transition
bfg540w bfg540wx bfg540wxr 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG540WBFG540W/X; BFG540W/XRNPN 9 GHz wideband transistorProduct specification 2000 May 23Supersedes data of 1997 Dec 04Philips Semiconductors Product specificationBFG540WNPN 9 GHz wideband transistorBFG540W/X; BFG540W/XRFEATURES MARKING High power gainTYPE NUMBER CODEfpage Low noise figure 4 3BFG540W N9 High transitio
bfg540 x xr n.pdf
BFG540; BFG540/X; BFG540/XRNPN 9 GHz wideband transistorRev. 05 21 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new lin
bfg540 bfg540x bfg540xr 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG540; BFG540/X; BFG540/XRNPN 9 GHz wideband transistorProduct specification 2000 May 23Supersedes data of 1997 Dec 03Philips Semiconductors Product specificationBFG540; BFG540/X;NPN 9 GHz wideband transistorBFG540/XRFEATURES PINNINGhandbook, 2 columns43 High power gainPIN DESCRIPTION Low noise figureBFG540 (Fig.1) Code: N
bfg540 v2.pdf
isc Silicon NPN RF Transistor BFG540DESCRIPTIONLow Noise FigureNF = 1.3 dB TYP.@V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP.21@V = 8 V,I = 40 mA,f = 900 MHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiersand linear broadband amplifiers.A
bfg540.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor BFG540DESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear bro
bfg540-x.pdf
isc Silicon NPN RF Transistor BFG540/XDESCRIPTIONLow Noise FigureNF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHzCE CHigh GainS 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz21 CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear broadband amplifiers.AB
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
