BUJ103A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUJ103A  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 700 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 12.5

Encapsulados: TO220AB

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BUJ103A datasheet

 ..1. Size:76K  philips
buj103a.pdf pdf_icon

BUJ103A

BUJ103A Silicon diffused power transistor Rev. 03 3 March 2005 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballasts DC-to-DC converters Inverters Motor control

 ..2. Size:84K  philips
buj103a hg 2.pdf pdf_icon

BUJ103A

DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor August 1998 Product specification Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast application

 ..3. Size:497K  cn ween semi
buj103a.pdf pdf_icon

BUJ103A

BUJ103A Silicon diffused power transistor Rev.05 - 29 March 2018 Product data sheet 1. General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 2. Features and benefits Low thermal resistance Fast switching 3. Applications Inverters Motor control systems Electronic lighting ballasts

 0.1. Size:87K  philips
buj103ax.pdf pdf_icon

BUJ103A

DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor August 1998 Product specification Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting balla

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