BUJ103A datasheet, аналоги, основные параметры

Наименование производителя: BUJ103A

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 80 W

Макcимально допустимое напряжение коллектор-база (Ucb): 700 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 12.5

Корпус транзистора: TO220AB

 Аналоги (замена) для BUJ103A

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BUJ103A даташит

 ..1. Size:76K  philips
buj103a.pdfpdf_icon

BUJ103A

BUJ103A Silicon diffused power transistor Rev. 03 3 March 2005 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballasts DC-to-DC converters Inverters Motor control

 ..2. Size:84K  philips
buj103a hg 2.pdfpdf_icon

BUJ103A

DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor August 1998 Product specification Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast application

 ..3. Size:497K  cn ween semi
buj103a.pdfpdf_icon

BUJ103A

BUJ103A Silicon diffused power transistor Rev.05 - 29 March 2018 Product data sheet 1. General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 2. Features and benefits Low thermal resistance Fast switching 3. Applications Inverters Motor control systems Electronic lighting ballasts

 0.1. Size:87K  philips
buj103ax.pdfpdf_icon

BUJ103A

DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor August 1998 Product specification Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting balla

Другие транзисторы: BFU690F, BFU710F, BFU725F, BFU730F, BFU760F, BFU790F, BUJ100, BUJ100LR, 2SC4793, BUJ103AD, BUJ103AX, BUJ105A, BUJ105AB, BUJ105AD, BUJ106A, BUJ302A, BUJ302AD