BUJ105A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor controlsystems, etc.QUICK REFERENCE DATASYMBOL PARAMETER

DISCRETE SEMICONDUCTORSDATA SHEETBUJ105ASilicon Diffused Power TransistorProduct specification February 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast application

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mountpackage intended for use in high frequency electronic lighting ballast applications, converters, inverters, switchingregulators, motor control systems, etc.QUICK REFERENCE

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM

BUJ105ADSilicon diffused power transistorRev. 01 14 December 2004 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428(D-PAK) surface mounted package.1.2 Features Low thermal resistance Fast switching1.3 Applications Electronic lighting ballast DC-to-DC converters Inverters Moto

DISCRETE SEMICONDUCTORSDATA SHEETBUJ105ABSilicon Diffused Power TransistorProduct specification October 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mountpackage intended for use in high frequency electronic lighti

BUJ105ADSilicon diffused power transistorRev. 4 13 July 2018 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package.1.2 Features and benefits Low thermal resistance Fast switching1.3 Applications Electronic lighting ballast DC-to-DC conv