BUJ105A datasheet, аналоги, основные параметры

Наименование производителя: BUJ105A  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 80 W

Макcимально допустимое напряжение коллектор-база (Ucb): 700 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 11

Корпус транзистора: TO220AB

 Аналоги (замена) для BUJ105A

- подборⓘ биполярного транзистора по параметрам

 

BUJ105A даташит

 ..1. Size:57K  philips
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BUJ105A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER

 ..2. Size:385K  cn ween semi
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BUJ105A

DISCRETE SEMICONDUCTORS DATA SHEET BUJ105A Silicon Diffused Power Transistor Product specification February 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast application

 0.1. Size:66K  philips
 buj105ab.pdf pdf_icon

BUJ105A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE

 0.2. Size:61K  philips
 buj105ax.pdf pdf_icon

BUJ105A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYM

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: BFU730F, BFU760F, BFU790F, BUJ100, BUJ100LR, BUJ103A, BUJ103AD, BUJ103AX, BD335, BUJ105AB, BUJ105AD, BUJ106A, BUJ302A, BUJ302AD, BUJ302AX, BUJ303A, BUJ303AD