BUJ105AD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUJ105AD
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 700 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 11
Paquete / Cubierta: DPAK
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BUJ105AD Datasheet (PDF)
buj105ad.pdf
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BUJ105ADSilicon diffused power transistorRev. 01 14 December 2004 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428(D-PAK) surface mounted package.1.2 Features Low thermal resistance Fast switching1.3 Applications Electronic lighting ballast DC-to-DC converters Inverters Moto
buj105ad.pdf
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BUJ105ADSilicon diffused power transistorRev. 4 13 July 2018 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package.1.2 Features and benefits Low thermal resistance Fast switching1.3 Applications Electronic lighting ballast DC-to-DC conv
buj105ab.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mountpackage intended for use in high frequency electronic lighting ballast applications, converters, inverters, switchingregulators, motor control systems, etc.QUICK REFERENCE
buj105ax.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM
buj105a.pdf
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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor controlsystems, etc.QUICK REFERENCE DATASYMBOL PARAMETER
buj105ab.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETBUJ105ABSilicon Diffused Power TransistorProduct specification October 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mountpackage intended for use in high frequency electronic lighti
buj105a.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETBUJ105ASilicon Diffused Power TransistorProduct specification February 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast application
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