Биполярный транзистор BUJ105AD
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUJ105AD
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 80
W
Макcимально допустимое напряжение коллектор-база (Ucb): 700
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700
V
Макcимальный постоянный ток коллектора (Ic): 8
A
Предельная температура PN-перехода (Tj): 150
°C
Статический коэффициент передачи тока (hfe): 11
Корпус транзистора:
DPAK
Аналоги (замена) для BUJ105AD
BUJ105AD
Datasheet (PDF)
..1. Size:81K philips
buj105ad.pdf 
BUJ105ADSilicon diffused power transistorRev. 01 14 December 2004 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428(D-PAK) surface mounted package.1.2 Features Low thermal resistance Fast switching1.3 Applications Electronic lighting ballast DC-to-DC converters Inverters Moto
..2. Size:1613K cn ween semi
buj105ad.pdf 
BUJ105ADSilicon diffused power transistorRev. 4 13 July 2018 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package.1.2 Features and benefits Low thermal resistance Fast switching1.3 Applications Electronic lighting ballast DC-to-DC conv
7.1. Size:66K philips
buj105ab.pdf 
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mountpackage intended for use in high frequency electronic lighting ballast applications, converters, inverters, switchingregulators, motor control systems, etc.QUICK REFERENCE
7.2. Size:61K philips
buj105ax.pdf 
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM
7.3. Size:57K philips
buj105a.pdf 
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor controlsystems, etc.QUICK REFERENCE DATASYMBOL PARAMETER
7.4. Size:454K cn ween semi
buj105ab.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETBUJ105ABSilicon Diffused Power TransistorProduct specification October 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mountpackage intended for use in high frequency electronic lighti
7.5. Size:385K cn ween semi
buj105a.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETBUJ105ASilicon Diffused Power TransistorProduct specification February 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast application
Другие транзисторы... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
