BUJ105AD datasheet, аналоги, основные параметры

Наименование производителя: BUJ105AD  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 80 W

Макcимально допустимое напряжение коллектор-база (Ucb): 700 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 11

Корпус транзистора: DPAK

 Аналоги (замена) для BUJ105AD

- подборⓘ биполярного транзистора по параметрам

 

BUJ105AD даташит

 ..1. Size:81K  philips
 buj105ad.pdf pdf_icon

BUJ105AD

BUJ105AD Silicon diffused power transistor Rev. 01 14 December 2004 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballast DC-to-DC converters Inverters Moto

 ..2. Size:1613K  cn ween semi
 buj105ad.pdf pdf_icon

BUJ105AD

BUJ105AD Silicon diffused power transistor Rev. 4 13 July 2018 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package. 1.2 Features and benefits Low thermal resistance Fast switching 1.3 Applications Electronic lighting ballast DC-to-DC conv

 7.1. Size:66K  philips
 buj105ab.pdf pdf_icon

BUJ105AD

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mount package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE

 7.2. Size:61K  philips
 buj105ax.pdf pdf_icon

BUJ105AD

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYM

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: BFU790F, BUJ100, BUJ100LR, BUJ103A, BUJ103AD, BUJ103AX, BUJ105A, BUJ105AB, B772, BUJ106A, BUJ302A, BUJ302AD, BUJ302AX, BUJ303A, BUJ303AD, BUJ303AX, BUJ303B