BUJ302A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUJ302ANPN power transistorRev. 02 28 March 2011 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package.1.2 Features and benefits Fast switching Low thermal resistance High voltage capability1.3 Applications DC-to-DC converters Inverters High-frequenc

BUJ302ANPN power transistor9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT78(TO-220AB) plastic package.2. Features and benefits Fast switching Low thermal resistance Very high voltage capability Very low switching and conduction losses3. Applications DC-to-DC converte

BUJ302ADNPN power transistorRev. 01 28 March 2011 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (DPAK) surface mounted package.1.2 Features and benefits Fast switching Low thermal resistance High voltage capability Surface-mountable package1.3 Applications DC-to-DC conv

BUJ302AXNPN power transistorRev. 02 28 March 2011 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT186A (TO-220F) plastic package.1.2 Features and benefits Fast switching Isolated package High voltage capability Low thermal resistance1.3 Applications DC-to-DC converters Inver

BUJ302ADNPN power transistor28 April 2018 Product data sheet1. General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPAK)surface mountable plastic package.2. Features and benefits Fast switching Low thermal resistance Surface mountable package Very high voltage capability Very low switching and conduction

IMPORTANT NOTICE10 December 20151. Global joint venture starts operations as WeEn SemiconductorsDear customer,As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang AssetManagement Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, whichwill be used in future Bipolar Power documents together with new contact details.In this document where