All Transistors. BUJ302A Datasheet

 

BUJ302A Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUJ302A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Emitter Voltage |Vce|: 1050 V
   Maximum Emitter-Base Voltage |Veb|: 24 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 42
   Noise Figure, dB: -
   Package: TO220AB

 BUJ302A Transistor Equivalent Substitute - Cross-Reference Search

   

BUJ302A Datasheet (PDF)

 ..1. Size:522K  nxp
buj302a.pdf

BUJ302A
BUJ302A

BUJ302ANPN power transistorRev. 02 28 March 2011 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package.1.2 Features and benefits Fast switching Low thermal resistance High voltage capability1.3 Applications DC-to-DC converters Inverters High-frequenc

 ..2. Size:844K  cn ween semi
buj302a.pdf

BUJ302A
BUJ302A

BUJ302ANPN power transistor9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT78(TO-220AB) plastic package.2. Features and benefits Fast switching Low thermal resistance Very high voltage capability Very low switching and conduction losses3. Applications DC-to-DC converte

 0.1. Size:532K  nxp
buj302ad.pdf

BUJ302A
BUJ302A

BUJ302ADNPN power transistorRev. 01 28 March 2011 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (DPAK) surface mounted package.1.2 Features and benefits Fast switching Low thermal resistance High voltage capability Surface-mountable package1.3 Applications DC-to-DC conv

 0.2. Size:256K  nxp
buj302ax.pdf

BUJ302A
BUJ302A

BUJ302AXNPN power transistorRev. 02 28 March 2011 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT186A (TO-220F) plastic package.1.2 Features and benefits Fast switching Isolated package High voltage capability Low thermal resistance1.3 Applications DC-to-DC converters Inver

 0.3. Size:291K  cn ween semi
buj302ad.pdf

BUJ302A
BUJ302A

BUJ302ADNPN power transistor28 April 2018 Product data sheet1. General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPAK)surface mountable plastic package.2. Features and benefits Fast switching Low thermal resistance Surface mountable package Very high voltage capability Very low switching and conduction

 0.4. Size:583K  cn ween semi
buj302ax.pdf

BUJ302A
BUJ302A

IMPORTANT NOTICE10 December 20151. Global joint venture starts operations as WeEn SemiconductorsDear customer,As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang AssetManagement Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, whichwill be used in future Bipolar Power documents together with new contact details.In this document where

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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