BUJ303B Todos los transistores

 

BUJ303B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUJ303B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 1050 V
   Tensión colector-emisor (Vce): 1050 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10.5
   Paquete / Cubierta: TO220AB
 

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BUJ303B Datasheet (PDF)

 ..1. Size:54K  philips
buj303b.pdf pdf_icon

BUJ303B

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYMBOL PARAMET

 ..2. Size:346K  cn ween semi
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BUJ303B

DISCRETE SEMICONDUCTORSDATA SHEETBUJ303BSilicon Diffused Power TransistorProduct specification March 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applications

 8.1. Size:579K  philips
buj303a.pdf pdf_icon

BUJ303B

BUJ303ANPN power transistorRev. 05 3 May 2011 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package.1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduction losses1.3 Applications

 8.2. Size:59K  philips
buj303ax 3.pdf pdf_icon

BUJ303B

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM

Otros transistores... BUJ105AD , BUJ106A , BUJ302A , BUJ302AD , BUJ302AX , BUJ303A , BUJ303AD , BUJ303AX , 2SC945 , BUJ303CD , BUJ403A , BUJD103AD , BUJD105AD , BUJD203A , BUJD203AD , BUJD203AX , BUT11APX-1200 .

 

 
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