BUJ303B
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUJ303B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100
W
Tensión colector-base (Vcb): 1050
V
Tensión colector-emisor (Vce): 1050
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10.5
Paquete / Cubierta:
TO220AB
Búsqueda de reemplazo de transistor bipolar BUJ303B
BUJ303B
Datasheet (PDF)
..1. Size:54K philips
buj303b.pdf 
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYMBOL PARAMET
..2. Size:346K cn ween semi
buj303b.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUJ303BSilicon Diffused Power TransistorProduct specification March 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applications
8.1. Size:579K philips
buj303a.pdf
BUJ303ANPN power transistorRev. 05 3 May 2011 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package.1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduction losses1.3 Applications
8.2. Size:59K philips
buj303ax 3.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM
8.3. Size:55K philips
buj303a 3.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYMBOL PARAMET
8.4. Size:189K nxp
buj303ad.pdf
BUJ303ADNPN power transistorRev. 1 2 September 2011 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package.1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduct
8.5. Size:195K nxp
buj303cd.pdf
BUJ303CDNPN power transistor8 November 2012 Product data sheet1. Product profile1.1 General descriptionHigh voltage high speed planar passivated NPN power switching transistor in a SOT428(DPAK) surface mountable plastic package.1.2 Features and benefits Fast switching Low thermal resistance Surface mountable package Tight DC gain spreads Very high voltage
8.6. Size:1197K cn ween semi
buj303ax.pdf
BUJ303AXNPN power transistor9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT186A(TO220F) "full pack" plastic package.2. Features and benefits Fast switching Isolated package Very high voltage capability Very low switching and conduction losses3. Applications DC-to-DC
8.7. Size:289K cn ween semi
buj303cd.pdf
BUJ303CDNPN power transistor6 August 2018 Product data sheet1. General descriptionHigh voltage high speed planar passivated NPN power switching transistor in a SOT428 (DPAK)surface mountable plastic package.2. Features and benefits Fast switching Low thermal resistance Surface mountable package Tight DC gain spreads Very high voltage capability Very low
8.8. Size:613K cn ween semi
buj303a.pdf
BUJ303ANPN power transistor12 October 2018 Product data sheet1. General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT78(TO-220AB) plastic package.2. Features and benefits Fast switching Low thermal resistance Very high voltage capability Very low switching and conduction losses3. Applications DC-to-DC convert
8.9. Size:215K inchange semiconductor
buj303a.pdf
isc Silicon NPN Power Transistor BUJ303ADESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency electronic lighting ballastapplications, converters, inverters, switching regulators,motor control systems, etc.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
