BUJ303B Datasheet, Equivalent, Cross Reference Search
Type Designator: BUJ303B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 1050 V
Maximum Collector-Emitter Voltage |Vce|: 1050 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10.5
Noise Figure, dB: -
Package: TO220AB
BUJ303B Transistor Equivalent Substitute - Cross-Reference Search
BUJ303B Datasheet (PDF)
buj303b.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYMBOL PARAMET
buj303b.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUJ303BSilicon Diffused Power TransistorProduct specification March 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applications
buj303a.pdf
BUJ303ANPN power transistorRev. 05 3 May 2011 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package.1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduction losses1.3 Applications
buj303ax 3.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM
buj303a 3.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYMBOL PARAMET
buj303ad.pdf
BUJ303ADNPN power transistorRev. 1 2 September 2011 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package.1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduct
buj303cd.pdf
BUJ303CDNPN power transistor8 November 2012 Product data sheet1. Product profile1.1 General descriptionHigh voltage high speed planar passivated NPN power switching transistor in a SOT428(DPAK) surface mountable plastic package.1.2 Features and benefits Fast switching Low thermal resistance Surface mountable package Tight DC gain spreads Very high voltage
buj303ax.pdf
BUJ303AXNPN power transistor9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT186A(TO220F) "full pack" plastic package.2. Features and benefits Fast switching Isolated package Very high voltage capability Very low switching and conduction losses3. Applications DC-to-DC
buj303cd.pdf
BUJ303CDNPN power transistor6 August 2018 Product data sheet1. General descriptionHigh voltage high speed planar passivated NPN power switching transistor in a SOT428 (DPAK)surface mountable plastic package.2. Features and benefits Fast switching Low thermal resistance Surface mountable package Tight DC gain spreads Very high voltage capability Very low
buj303a.pdf
BUJ303ANPN power transistor12 October 2018 Product data sheet1. General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT78(TO-220AB) plastic package.2. Features and benefits Fast switching Low thermal resistance Very high voltage capability Very low switching and conduction losses3. Applications DC-to-DC convert
buj303a.pdf
isc Silicon NPN Power Transistor BUJ303ADESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency electronic lighting ballastapplications, converters, inverters, switching regulators,motor control systems, etc.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
