BUJ303B Datasheet. Specs and Replacement

Type Designator: BUJ303B  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1050 V

Maximum Collector-Emitter Voltage |Vce|: 1050 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10.5

Noise Figure, dB: -

Package: TO220AB

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BUJ303B datasheet

 ..1. Size:54K  philips

buj303b.pdf pdf_icon

BUJ303B

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMET... See More ⇒

 ..2. Size:346K  cn ween semi

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BUJ303B

DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications... See More ⇒

 8.1. Size:579K  philips

buj303a.pdf pdf_icon

BUJ303B

BUJ303A NPN power transistor Rev. 05 3 May 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduction losses 1.3 Applications ... See More ⇒

 8.2. Size:59K  philips

buj303ax 3.pdf pdf_icon

BUJ303B

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYM... See More ⇒

Detailed specifications: BUJ105AD, BUJ106A, BUJ302A, BUJ302AD, BUJ302AX, BUJ303A, BUJ303AD, BUJ303AX, TIP127, BUJ303CD, BUJ403A, BUJD103AD, BUJD105AD, BUJD203A, BUJD203AD, BUJD203AX, BUT11APX-1200

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