BUJ303CD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUJ303CD
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-emisor (Vce): 1050 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 34
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de BUJ303CD
BUJ303CD Datasheet (PDF)
buj303cd.pdf

BUJ303CDNPN power transistor8 November 2012 Product data sheet1. Product profile1.1 General descriptionHigh voltage high speed planar passivated NPN power switching transistor in a SOT428(DPAK) surface mountable plastic package.1.2 Features and benefits Fast switching Low thermal resistance Surface mountable package Tight DC gain spreads Very high voltage
buj303cd.pdf

BUJ303CDNPN power transistor6 August 2018 Product data sheet1. General descriptionHigh voltage high speed planar passivated NPN power switching transistor in a SOT428 (DPAK)surface mountable plastic package.2. Features and benefits Fast switching Low thermal resistance Surface mountable package Tight DC gain spreads Very high voltage capability Very low
buj303b.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended foruse in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYMBOL PARAMET
buj303a.pdf

BUJ303ANPN power transistorRev. 05 3 May 2011 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package.1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduction losses1.3 Applications
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