BUJ303CD Datasheet. Equivalente

 ..1. Size:195K  nxp
 buj303cd.pdf

BUJ303CD NPN power transistor 8 November 2012 Product data sheet 1. Product profile 1.1 General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package. 1.2 Features and benefits Fast switching Low thermal resistance Surface mountable package Tight DC gain spreads Very high voltage

 ..2. Size:289K  cn ween semi
 buj303cd.pdf

BUJ303CD NPN power transistor 6 August 2018 Product data sheet 1. General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package. 2. Features and benefits Fast switching Low thermal resistance Surface mountable package Tight DC gain spreads Very high voltage capability Very low

 8.1. Size:54K  philips
 buj303b.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMET

 8.2. Size:579K  philips
 buj303a.pdf

BUJ303A NPN power transistor Rev. 05 3 May 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduction losses 1.3 Applications

 8.3. Size:59K  philips
 buj303ax 3.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYM

 8.4. Size:55K  philips
 buj303a 3.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMET

 8.5. Size:189K  nxp
 buj303ad.pdf

BUJ303AD NPN power transistor Rev. 1 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package. 1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduct

 8.6. Size:1197K  cn ween semi
 buj303ax.pdf

BUJ303AX NPN power transistor 9 October 2018 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A (TO220F) "full pack" plastic package. 2. Features and benefits Fast switching Isolated package Very high voltage capability Very low switching and conduction losses 3. Applications DC-to-DC

 8.7. Size:346K  cn ween semi
 buj303b.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications

 8.8. Size:613K  cn ween semi
 buj303a.pdf

BUJ303A NPN power transistor 12 October 2018 Product data sheet 1. General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 2. Features and benefits Fast switching Low thermal resistance Very high voltage capability Very low switching and conduction losses 3. Applications DC-to-DC convert

 8.9. Size:215K  inchange semiconductor
 buj303a.pdf

isc Silicon NPN Power Transistor BUJ303A DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL