BUJ303CD Specs and Replacement
Type Designator: BUJ303CD
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Emitter Voltage |Vce|: 1050 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 34
Noise Figure, dB: -
Package: DPAK
- BJT ⓘ Cross-Reference Search
BUJ303CD datasheet
..1. Size:195K nxp
buj303cd.pdf 

BUJ303CD NPN power transistor 8 November 2012 Product data sheet 1. Product profile 1.1 General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package. 1.2 Features and benefits Fast switching Low thermal resistance Surface mountable package Tight DC gain spreads Very high voltage ... See More ⇒
..2. Size:289K cn ween semi
buj303cd.pdf 

BUJ303CD NPN power transistor 6 August 2018 Product data sheet 1. General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package. 2. Features and benefits Fast switching Low thermal resistance Surface mountable package Tight DC gain spreads Very high voltage capability Very low... See More ⇒
8.1. Size:54K philips
buj303b.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMET... See More ⇒
8.2. Size:579K philips
buj303a.pdf 

BUJ303A NPN power transistor Rev. 05 3 May 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduction losses 1.3 Applications ... See More ⇒
8.3. Size:59K philips
buj303ax 3.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYM... See More ⇒
8.4. Size:55K philips
buj303a 3.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMET... See More ⇒
8.5. Size:189K nxp
buj303ad.pdf 

BUJ303AD NPN power transistor Rev. 1 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package. 1.2 Features and benefits Fast switching Very high voltage capability Low thermal resistance Very low switching and conduct... See More ⇒
8.6. Size:1197K cn ween semi
buj303ax.pdf 

BUJ303AX NPN power transistor 9 October 2018 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A (TO220F) "full pack" plastic package. 2. Features and benefits Fast switching Isolated package Very high voltage capability Very low switching and conduction losses 3. Applications DC-to-DC ... See More ⇒
8.7. Size:346K cn ween semi
buj303b.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2018 WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications... See More ⇒
8.8. Size:613K cn ween semi
buj303a.pdf 

BUJ303A NPN power transistor 12 October 2018 Product data sheet 1. General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 (TO-220AB) plastic package. 2. Features and benefits Fast switching Low thermal resistance Very high voltage capability Very low switching and conduction losses 3. Applications DC-to-DC convert... See More ⇒
8.9. Size:215K inchange semiconductor
buj303a.pdf 

isc Silicon NPN Power Transistor BUJ303A DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL... See More ⇒
Detailed specifications: BUJ106A, BUJ302A, BUJ302AD, BUJ302AX, BUJ303A, BUJ303AD, BUJ303AX, BUJ303B, 2SD313, BUJ403A, BUJD103AD, BUJD105AD, BUJD203A, BUJD203AD, BUJD203AX, BUT11APX-1200, MX0912B251Y
Keywords - BUJ303CD pdf specs
BUJ303CD cross reference
BUJ303CD equivalent finder
BUJ303CD pdf lookup
BUJ303CD substitution
BUJ303CD replacement