BUJD105AD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUJD105AD
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 700 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 12.5
Paquete / Cubierta: DPAK
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BUJD105AD Datasheet (PDF)
bujd105ad.pdf
BUJD105ADNPN power transistor with integrated diodeRev. 01 8 May 2009 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.1.2 Features and benefits Fast switching Very low switching and conduction
bujd103ad.pdf
BUJD103ADNPN power transistor with integrated diodeRev. 02 6 October 2009 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.1.2 Features and benefits Fast switching Integrated anti-parallel E-C dio
bujd103ad.pdf
BUJD103ADNPN power transistor with integrated diode11 October 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface mountable plastic package.2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C di
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: BDP952 | 2N6525
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