BUJD105AD Datasheet and Replacement
Type Designator: BUJD105AD
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 12.5
Noise Figure, dB: -
Package: DPAK
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BUJD105AD Datasheet (PDF)
bujd105ad.pdf

BUJD105ADNPN power transistor with integrated diodeRev. 01 8 May 2009 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.1.2 Features and benefits Fast switching Very low switching and conduction
bujd103ad.pdf

BUJD103ADNPN power transistor with integrated diodeRev. 02 6 October 2009 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.1.2 Features and benefits Fast switching Integrated anti-parallel E-C dio
bujd103ad.pdf

BUJD103ADNPN power transistor with integrated diode11 October 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface mountable plastic package.2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C di
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA1317T | 2SA2059 | 2SB883 | 2SD1548 | 2N2076 | T2448 | KRX104E
Keywords - BUJD105AD transistor datasheet
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History: 2SA1317T | 2SA2059 | 2SB883 | 2SD1548 | 2N2076 | T2448 | KRX104E



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