BUJD203AX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUJD203AX
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 26 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 850 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 12.5
Paquete / Cubierta: TO220F

Búsqueda de reemplazo de transistor bipolar BUJD203AX

BUJD203AX Datasheet (PDF)

..1. Size:200K nxp
bujd203ax.pdf

BUJD203AXNPN power transistor with integrated diodeRev. 01 27 September 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) full pack plastic package.1.2 Features and benefits Fast switching Isolated package High voltage capa

..2. Size:778K cn ween semi
bujd203ax.pdf

BUJD203AXNPN power transistor with integrated diode9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) "full pack" plastic package.2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode

6.1. Size:214K nxp
bujd203ad.pdf

BUJD203ADNPN power transistor with integrated diodeRev. 01 27 September 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.1.2 Features and benefits Fast switching Surface-mountable package H

6.2. Size:159K nxp
bujd203a.pdf

BUJD203ANPN power transistor with integrated diodeRev. 02 2 December 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package.1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High

6.3. Size:294K cn ween semi
bujd203ad.pdf

BUJD203ADNPN power transistor with integrated diode23 July 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode

6.4. Size:1058K cn ween semi
bujd203a.pdf

BUJD203ANPN power transistor with integrated diode9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package.2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode Very low

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2N6567

Liste

Recientemente añadidas las descripciónes de los transistores:

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