Биполярный транзистор BUJD203AX - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BUJD203AX
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 26 W
Макcимально допустимое напряжение коллектор-база (Ucb): 850 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 850 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 12.5
Корпус транзистора: TO220F
Аналоги (замена) для BUJD203AX
BUJD203AX Datasheet (PDF)
bujd203ax.pdf
BUJD203AXNPN power transistor with integrated diodeRev. 01 27 September 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) full pack plastic package.1.2 Features and benefits Fast switching Isolated package High voltage capa
bujd203ax.pdf
BUJD203AXNPN power transistor with integrated diode9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) "full pack" plastic package.2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode
bujd203ad.pdf
BUJD203ADNPN power transistor with integrated diodeRev. 01 27 September 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.1.2 Features and benefits Fast switching Surface-mountable package H
bujd203a.pdf
BUJD203ANPN power transistor with integrated diodeRev. 02 2 December 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package.1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High
bujd203ad.pdf
BUJD203ADNPN power transistor with integrated diode23 July 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode
bujd203a.pdf
BUJD203ANPN power transistor with integrated diode9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package.2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode Very low
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