MX0912B251Y Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MX0912B251Y

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 690 W

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1250 MHz

Ganancia de corriente contínua (hFE): 5

Encapsulados: SOT439A

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MX0912B251Y datasheet

 ..1. Size:77K  philips
 mx0912b251y 2.pdf pdf_icon

MX0912B251Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor 1997 Feb 19 Product specification Supersedes data of November 1994 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting resistors providing ex

 7.1. Size:81K  philips
 mx0912b100y mz0912b100y.pdf pdf_icon

MX0912B251Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors 1997 Feb 20 Product specification Supersedes data of June 1992 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING Interdigitated structure provides high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting

 7.2. Size:76K  philips
 mx0912b351y 2.pdf pdf_icon

MX0912B251Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor 1997 Feb 19 Product specification Supersedes data of November 1994 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting resistors providing ex

 7.3. Size:78K  philips
 mx0912b100y.pdf pdf_icon

MX0912B251Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors 1997 Feb 20 Product specification Supersedes data of June 1992 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING Interdigitated structure provides high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting

MOSTRAR MÁS

Otros transistores... BUJ303CD, BUJ403A, BUJD103AD, BUJD105AD, BUJD203A, BUJD203AD, BUJD203AX, BUT11APX-1200, 2SC945, MX0912B351Y, MZ0912B100Y, MZ0912B50Y, 3CA649, 3CA649A, 3CA683, 3CA684, 3CA688