MX0912B251Y Datasheet and Replacement
Type Designator: MX0912B251Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 690 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1250 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: SOT439A
MX0912B251Y Substitution
MX0912B251Y Datasheet (PDF)
mx0912b251y 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETMX0912B251YNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MX0912B251YFEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting resistors providing ex
mx0912b100y mz0912b100y.pdf
DISCRETE SEMICONDUCTORSDATA SHEETMX0912B100Y; MZ0912B100YNPN microwave power transistors1997 Feb 20Product specificationSupersedes data of June 1992Philips Semiconductors Product specificationNPN microwave power transistors MX0912B100Y; MZ0912B100YFEATURES PINNING Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting
mx0912b351y 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETMX0912B351YNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MX0912B351YFEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting resistors providing ex
mx0912b100y.pdf
DISCRETE SEMICONDUCTORSDATA SHEETMX0912B100Y; MZ0912B100YNPN microwave power transistors1997 Feb 20Product specificationSupersedes data of June 1992Philips Semiconductors Product specificationNPN microwave power transistors MX0912B100Y; MZ0912B100YFEATURES PINNING Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting
Datasheet: BUJ303CD , BUJ403A , BUJD103AD , BUJD105AD , BUJD203A , BUJD203AD , BUJD203AX , BUT11APX-1200 , 2SC2655 , MX0912B351Y , MZ0912B100Y , MZ0912B50Y , 3CA649 , 3CA649A , 3CA683 , 3CA684 , 3CA688 .
History: GD617
Keywords - MX0912B251Y transistor datasheet
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History: GD617
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