All Transistors. MX0912B251Y Datasheet

 

MX0912B251Y Datasheet and Replacement


   Type Designator: MX0912B251Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 690 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: SOT439A
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MX0912B251Y Datasheet (PDF)

 ..1. Size:77K  philips
 mx0912b251y 2.pdf pdf_icon

MX0912B251Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B251YNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MX0912B251YFEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting resistors providing ex

 7.1. Size:81K  philips
 mx0912b100y mz0912b100y.pdf pdf_icon

MX0912B251Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B100Y; MZ0912B100YNPN microwave power transistors1997 Feb 20Product specificationSupersedes data of June 1992Philips Semiconductors Product specificationNPN microwave power transistors MX0912B100Y; MZ0912B100YFEATURES PINNING Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting

 7.2. Size:76K  philips
 mx0912b351y 2.pdf pdf_icon

MX0912B251Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B351YNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MX0912B351YFEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting resistors providing ex

 7.3. Size:78K  philips
 mx0912b100y.pdf pdf_icon

MX0912B251Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B100Y; MZ0912B100YNPN microwave power transistors1997 Feb 20Product specificationSupersedes data of June 1992Philips Semiconductors Product specificationNPN microwave power transistors MX0912B100Y; MZ0912B100YFEATURES PINNING Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting

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