MX0912B251Y Specs and Replacement

Type Designator: MX0912B251Y

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 690 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1250 MHz

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: SOT439A

 MX0912B251Y Substitution

- BJT ⓘ Cross-Reference Search

 

MX0912B251Y datasheet

 ..1. Size:77K  philips

 mx0912b251y 2.pdf pdf_icon

MX0912B251Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor 1997 Feb 19 Product specification Supersedes data of November 1994 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting resistors providing ex... See More ⇒

 7.1. Size:81K  philips

 mx0912b100y mz0912b100y.pdf pdf_icon

MX0912B251Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors 1997 Feb 20 Product specification Supersedes data of June 1992 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING Interdigitated structure provides high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting ... See More ⇒

 7.2. Size:76K  philips

 mx0912b351y 2.pdf pdf_icon

MX0912B251Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor 1997 Feb 19 Product specification Supersedes data of November 1994 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting resistors providing ex... See More ⇒

 7.3. Size:78K  philips

 mx0912b100y.pdf pdf_icon

MX0912B251Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors 1997 Feb 20 Product specification Supersedes data of June 1992 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING Interdigitated structure provides high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting ... See More ⇒

SHOW MORE

Detailed specifications: BUJ303CD, BUJ403A, BUJD103AD, BUJD105AD, BUJD203A, BUJD203AD, BUJD203AX, BUT11APX-1200, 2SC945, MX0912B351Y, MZ0912B100Y, MZ0912B50Y, 3CA649, 3CA649A, 3CA683, 3CA684, 3CA688

Keywords - MX0912B251Y pdf specs

 MX0912B251Y cross reference

 MX0912B251Y equivalent finder

 MX0912B251Y pdf lookup

 MX0912B251Y substitution

 MX0912B251Y replacement