2N5611A Todos los transistores

 

2N5611A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5611A

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 560 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO66

 Búsqueda de reemplazo de 2N5611A

- Selecciónⓘ de transistores por parámetros

 

2N5611A datasheet

 ..1. Size:129K  inchange semiconductor
2n5611a.pdf pdf_icon

2N5611A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5611A DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolu

 8.1. Size:11K  semelab
2n5611.pdf pdf_icon

2N5611A

2N5611 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 100V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 8.2. Size:126K  jmnic
2n5605 2n5607 2n5609 2n5611.pdf pdf_icon

2N5611A

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66)

 8.3. Size:127K  inchange semiconductor
2n5605 2n5607 2n5609 2n5611.pdf pdf_icon

2N5611A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol

Otros transistores... 2N5605 , 2N5606 , 2N5607 , 2N5608 , 2N5609 , 2N561 , 2N5610 , 2N5611 , 2SA1943 , 2N5612 , 2N5612A , 2N5613 , 2N5614 , 2N5615 , 2N5616 , 2N5617 , 2N5618 .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

2n3638 | tip127 datasheet | irlz24n | irf620 | irfp350 | 13003 transistor | c458 transistor | 2sc1775

 

 

↑ Back to Top
.