Биполярный транзистор 2N5611A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5611A
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 560 MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO66
2N5611A Datasheet (PDF)
2n5611a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5611A DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolu
2n5611.pdf
2N5611Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 100V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci
2n5605 2n5607 2n5609 2n5611.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-66)
2n5605 2n5607 2n5609 2n5611.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol
2n5611.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5611 DESCRIPTION DC Current Gain- : hFE= 30-90@IC= -2.5A Wide Area of Safe Operation Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) Complement to Type 2N5612 APPLICATIONSDesigned for use in high frequency power amplifiers, audio power amplifier and drivers. ABS
Другие транзисторы... 2N5605 , 2N5606 , 2N5607 , 2N5608 , 2N5609 , 2N561 , 2N5610 , 2N5611 , TIP42C , 2N5612 , 2N5612A , 2N5613 , 2N5614 , 2N5615 , 2N5616 , 2N5617 , 2N5618 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050