PBHV8540T
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBHV8540T
Código: W4*
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 500
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30
MHz
Capacitancia de salida (Cc): 4
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar PBHV8540T
PBHV8540T
Datasheet (PDF)
..1. Size:108K philips
pbhv8540t.pdf
PBHV8540T500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistorRev. 02 14 January 2009 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040T.1.2 Features High voltage Low collector-emitter sa
..2. Size:225K nxp
pbhv8540t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.1. Size:236K nxp
pbhv8540x.pdf
PBHV8540X500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor5 December 2013 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040X.2. Features and benefits High voltage Low collector-emitter
6.2. Size:120K nxp
pbhv8540z.pdf
PBHV8540Z500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 7 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040Z.1.2 Features High voltage Low collector-emitt
8.1. Size:724K nxp
pbhv8515qa.pdf
PBHV8515QA150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor19 November 2015 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic packagewith visible and solderable side pads.PNP complement: PBHV9515QA.2. Features and benefits
8.2. Size:209K nxp
pbhv8560z.pdf
PBHV8560Z600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor13 March 2015 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223(SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9560Z2. Features and benefits Low collector-emitter saturation voltage VCEsat Hi
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.