PBHV8540T Specs and Replacement

Type Designator: PBHV8540T

SMD Transistor Code: W4*

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

 PBHV8540T Substitution

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PBHV8540T datasheet

 ..1. Size:108K  philips

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PBHV8540T

PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040T. 1.2 Features High voltage Low collector-emitter sa... See More ⇒

 ..2. Size:225K  nxp

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PBHV8540T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 6.1. Size:236K  nxp

 pbhv8540x.pdf pdf_icon

PBHV8540T

PBHV8540X 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 5 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040X. 2. Features and benefits High voltage Low collector-emitter... See More ⇒

 6.2. Size:120K  nxp

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PBHV8540T

PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 7 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040Z. 1.2 Features High voltage Low collector-emitt... See More ⇒

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Detailed specifications: 3CA80B, 3CA80C, 3CA80D, 3CA80E, PBHV8115T, PBHV8115Z, PBHV8140Z, PBHV8215Z, S9018, PBHV8540Z, PBHV9040T, PBHV9040Z, PBHV9050T, PBHV9115T, PBHV9115Z, PBHV9215Z, PBHV9540Z

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