PBHV9050T Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBHV9050T

Código: LL*

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 500 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT23

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PBHV9050T datasheet

 ..1. Size:90K  philips
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PBHV9050T

PBHV9050T 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor Rev. 01 16 September 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PMBTA45. 1.2 Features High voltage Low collector-emitter s

 ..2. Size:207K  nxp
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PBHV9050T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:333K  philips
pbhv9050z.pdf pdf_icon

PBHV9050T

PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor Rev. 1 19 August 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturation v

 6.2. Size:333K  nxp
pbhv9050z.pdf pdf_icon

PBHV9050T

PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor Rev. 1 19 August 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturation v

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