Биполярный транзистор PBHV9050T Даташит. Аналоги
Наименование производителя: PBHV9050T
Маркировка: LL*
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT23
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PBHV9050T Datasheet (PDF)
pbhv9050t.pdf

PBHV9050T500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistorRev. 01 16 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PMBTA45.1.2 Features High voltage Low collector-emitter s
pbhv9050t.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbhv9050z.pdf

PBHV9050Z500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistorRev. 1 19 August 2010 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturation v
pbhv9050z.pdf

PBHV9050Z500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistorRev. 1 19 August 2010 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturation v
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: DDTB142TC | D62T8030 | BF393 | KRC407V | ZTX454 | DTA024EEB | DMC56603
History: DDTB142TC | D62T8030 | BF393 | KRC407V | ZTX454 | DTA024EEB | DMC56603



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