PBHV9115Z Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBHV9115Z

Código: V9115Z

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.7 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 115 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT223

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PBHV9115Z datasheet

 ..1. Size:129K  philips
 pbhv9115z.pdf pdf_icon

PBHV9115Z

PBHV9115Z 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115Z. 1.2 Features High voltage Low collector-emitter

 ..2. Size:246K  nxp
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PBHV9115Z

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:155K  philips
 pbhv9115x.pdf pdf_icon

PBHV9115Z

PBHV9115X 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 10 March 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturat

 6.2. Size:111K  nxp
 pbhv9115t.pdf pdf_icon

PBHV9115Z

PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T. 1.2 Features High voltage Low collector-emitter satur

MOSTRAR MÁS

Otros transistores... PBHV8140Z, PBHV8215Z, PBHV8540T, PBHV8540Z, PBHV9040T, PBHV9040Z, PBHV9050T, PBHV9115T, B647, PBHV9215Z, PBHV9540Z, PBLS1501V, PBLS1501Y, PBLS1502V, PBLS1502Y, PBLS1503V, PBLS1503Y