Справочник транзисторов. PBHV9115Z

 

Биполярный транзистор PBHV9115Z - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PBHV9115Z
   Маркировка: V9115Z
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.7 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 115 MHz
   Ёмкость коллекторного перехода (Cc): 10 pf
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: SOT223

 Аналоги (замена) для PBHV9115Z

 

 

PBHV9115Z Datasheet (PDF)

 ..1. Size:129K  philips
pbhv9115z.pdf

PBHV9115Z
PBHV9115Z

PBHV9115Z150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 02 9 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8115Z.1.2 Features High voltage Low collector-emitter

 ..2. Size:246K  nxp
pbhv9115z.pdf

PBHV9115Z
PBHV9115Z

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:155K  philips
pbhv9115x.pdf

PBHV9115Z
PBHV9115Z

PBHV9115X150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 01 10 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturat

 6.2. Size:111K  nxp
pbhv9115t.pdf

PBHV9115Z
PBHV9115Z

PBHV9115T150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 02 9 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8115T.1.2 Features High voltage Low collector-emitter satur

 6.3. Size:413K  nxp
pbhv9115tlh.pdf

PBHV9115Z
PBHV9115Z

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.4. Size:155K  nxp
pbhv9115x.pdf

PBHV9115Z
PBHV9115Z

PBHV9115X150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 01 10 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturat

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