PBHV9540Z Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBHV9540Z
Código: V9540Z
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.45 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 30 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT223
Búsqueda de reemplazo de PBHV9540Z
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PBHV9540Z datasheet
..1. Size:149K philips
pbhv9540z.pdf 
PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8140Z. 1.2 Features High voltage Low collector-emi
..2. Size:266K nxp
pbhv9540z.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.1. Size:228K nxp
pbhv9540x.pdf
PBHV9540X 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 28 September 2017 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8540X 2. Features and benefits High voltage Low collector-emitte
8.1. Size:211K nxp
pbhv9560z.pdf
PBHV9560Z 600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 12 August 2014 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8560Z 2. Features and benefits High voltage Low collector-emitter saturation vol
9.1. Size:333K philips
pbhv9050z.pdf
PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor Rev. 1 19 August 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturation v
9.2. Size:151K philips
pbhv9215z.pdf
PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8215Z. 1.2 Features High voltage Low collector-emitt
9.3. Size:90K philips
pbhv9050t.pdf
PBHV9050T 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor Rev. 01 16 September 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PMBTA45. 1.2 Features High voltage Low collector-emitter s
9.4. Size:118K philips
pbhv9040t.pdf
PBHV9040T 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8540T. 1.2 Features High voltage Low collector-emitter s
9.5. Size:130K philips
pbhv9040z.pdf
PBHV9040Z 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8540Z. 1.2 Features High voltage Low collector-emit
9.6. Size:155K philips
pbhv9115x.pdf
PBHV9115X 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 10 March 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturat
9.7. Size:129K philips
pbhv9115z.pdf
PBHV9115Z 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115Z. 1.2 Features High voltage Low collector-emitter
9.8. Size:333K nxp
pbhv9050z.pdf
PBHV9050Z 500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor Rev. 1 19 August 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturation v
9.9. Size:268K nxp
pbhv9215z.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
9.10. Size:244K nxp
pbhv9040x.pdf
PBHV9040X 500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor 9 December 2013 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8540X. 2. Features and benefits High voltage Low collector-emitte
9.11. Size:207K nxp
pbhv9050t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
9.12. Size:234K nxp
pbhv9040t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
9.13. Size:111K nxp
pbhv9115t.pdf
PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T. 1.2 Features High voltage Low collector-emitter satur
9.14. Size:247K nxp
pbhv9040z.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
9.15. Size:413K nxp
pbhv9115tlh.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
9.16. Size:155K nxp
pbhv9115x.pdf
PBHV9115X 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 10 March 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturat
9.17. Size:246K nxp
pbhv9115z.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
9.18. Size:260K nxp
pbhv9414z.pdf
PBHV9414Z 140 V, 4 A PNP high-voltage low VCEsat (BISS) transistor 24 January 2014 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High collector
Otros transistores... PBHV8540T, PBHV8540Z, PBHV9040T, PBHV9040Z, PBHV9050T, PBHV9115T, PBHV9115Z, PBHV9215Z, D667, PBLS1501V, PBLS1501Y, PBLS1502V, PBLS1502Y, PBLS1503V, PBLS1503Y, PBLS1504V, PBLS1504Y
