All Transistors. PBHV9540Z Datasheet

 

PBHV9540Z Datasheet and Replacement


   Type Designator: PBHV9540Z
   SMD Transistor Code: V9540Z
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.45 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT223
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PBHV9540Z Datasheet (PDF)

 ..1. Size:149K  philips
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PBHV9540Z

PBHV9540Z500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistorRev. 01 11 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8140Z.1.2 Features High voltage Low collector-emi

 ..2. Size:266K  nxp
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PBHV9540Z

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:228K  nxp
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PBHV9540Z

PBHV9540X400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor28 September 2017 Product data sheet1. General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62)medium power and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8540X2. Features and benefits High voltage Low collector-emitte

 8.1. Size:211K  nxp
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PBHV9540Z

PBHV9560Z600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor12 August 2014 Product data sheet1. General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8560Z2. Features and benefits High voltage Low collector-emitter saturation vol

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ESM2060 | 2N6558 | DTA123EET1G | 3DD4617H | MP602 | BUR32 | 2SC1045

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