PBHV9540Z Specs and Replacement

Type Designator: PBHV9540Z

SMD Transistor Code: V9540Z

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.45 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT223

 PBHV9540Z Substitution

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PBHV9540Z datasheet

 ..1. Size:149K  philips

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PBHV9540Z

PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8140Z. 1.2 Features High voltage Low collector-emi... See More ⇒

 ..2. Size:266K  nxp

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PBHV9540Z

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 6.1. Size:228K  nxp

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PBHV9540Z

PBHV9540X 400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 28 September 2017 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8540X 2. Features and benefits High voltage Low collector-emitte... See More ⇒

 8.1. Size:211K  nxp

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PBHV9540Z

PBHV9560Z 600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 12 August 2014 Product data sheet 1. General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8560Z 2. Features and benefits High voltage Low collector-emitter saturation vol... See More ⇒

Detailed specifications: PBHV8540T, PBHV8540Z, PBHV9040T, PBHV9040Z, PBHV9050T, PBHV9115T, PBHV9115Z, PBHV9215Z, D667, PBLS1501V, PBLS1501Y, PBLS1502V, PBLS1502Y, PBLS1503V, PBLS1503Y, PBLS1504V, PBLS1504Y

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