PBLS6001D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBLS6001D  📄📄 

Código: F1

Material: Si

Polaridad de transistor: Pre-Biased-NPN*PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 2.2 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.6 W

Tensión colector-emisor (Vce): 60 V

Corriente del colector DC máxima (Ic): 1 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: SC74

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PBLS6001D datasheet

 ..1. Size:136K  nxp
pbls6001d.pdf pdf_icon

PBLS6001D

PBLS6001D 60 V PNP BISS loadswitch Rev. 02 7 September 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pa

 7.1. Size:137K  nxp
pbls6003d.pdf pdf_icon

PBLS6001D

PBLS6003D 60 V PNP BISS loadswitch Rev. 02 7 September 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pa

 7.2. Size:138K  nxp
pbls6002d.pdf pdf_icon

PBLS6001D

PBLS6002D 60 V PNP BISS loadswitch Rev. 02 7 September 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pa

 7.3. Size:137K  nxp
pbls6004d.pdf pdf_icon

PBLS6001D

PBLS6004D 60 V PNP BISS loadswitch Rev. 02 7 September 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features Low VCEsat (BISS) transistor and resistor-equipped transistor in one pa

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