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PBSS301PZ . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS301PZ
   Código: S301PZ
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 12 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 5.7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 190 pF
   Ganancia de corriente contínua (hfe): 250
   Paquete / Cubierta: SOT223

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PBSS301PZ Datasheet (PDF)

 ..1. Size:152K  nxp
pbss301pz.pdf

PBSS301PZ
PBSS301PZ

PBSS301PZ12 V, 5.7 A PNP low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS301NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 6.1. Size:128K  philips
pbss301pd.pdf

PBSS301PZ
PBSS301PZ

PBSS301PD20 V, 4 A PNP low VCEsat (BISS) transistorRev. 03 17 December 2007 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS301ND.1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit

 6.2. Size:245K  nxp
pbss301pd.pdf

PBSS301PZ
PBSS301PZ

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.3. Size:176K  nxp
pbss301px.pdf

PBSS301PZ
PBSS301PZ

PBSS301PX12 V, 5.3 A PNP low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS301NX.1.2 Features Low collector-emitter saturation voltage VCEsa

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