PBSS301PZ
Datasheet, Equivalent, Cross Reference Search
Type Designator: PBSS301PZ
SMD Transistor Code: S301PZ
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2
W
Maximum Collector-Base Voltage |Vcb|: 12
V
Maximum Collector-Emitter Voltage |Vce|: 12
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 5.7
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 140
MHz
Collector Capacitance (Cc): 190
pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package:
SOT223
PBSS301PZ
Transistor Equivalent Substitute - Cross-Reference Search
PBSS301PZ
Datasheet (PDF)
..1. Size:152K nxp
pbss301pz.pdf
PBSS301PZ12 V, 5.7 A PNP low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS301NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c
6.1. Size:128K philips
pbss301pd.pdf
PBSS301PD20 V, 4 A PNP low VCEsat (BISS) transistorRev. 03 17 December 2007 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS301ND.1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit
6.2. Size:245K nxp
pbss301pd.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.3. Size:176K nxp
pbss301px.pdf
PBSS301PX12 V, 5.3 A PNP low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS301NX.1.2 Features Low collector-emitter saturation voltage VCEsa
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