PBSS301PZ Specs and Replacement

Type Designator: PBSS301PZ

SMD Transistor Code: S301PZ

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 12 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 190 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: SOT223

 PBSS301PZ Substitution

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PBSS301PZ datasheet

 ..1. Size:152K  nxp

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PBSS301PZ

PBSS301PZ 12 V, 5.7 A PNP low VCEsat (BISS) transistor Rev. 02 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS301NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c... See More ⇒

 6.1. Size:128K  philips

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PBSS301PZ

PBSS301PD 20 V, 4 A PNP low VCEsat (BISS) transistor Rev. 03 17 December 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS301ND. 1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit... See More ⇒

 6.2. Size:245K  nxp

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PBSS301PZ

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 6.3. Size:176K  nxp

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PBSS301PZ

PBSS301PX 12 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS301NX. 1.2 Features Low collector-emitter saturation voltage VCEsa... See More ⇒

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Detailed specifications: PBSS2515YPN, PBSS2540E, PBSS2540M, PBSS301ND, PBSS301NX, PBSS301NZ, PBSS301PD, PBSS301PX, S9013, PBSS302ND, PBSS302NX, PBSS302NZ, PBSS302PD, PBSS302PX, PBSS302PZ, PBSS303ND, PBSS303NX

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