PBSS302NZ
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS302NZ
Código: S302NZ
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 5.8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140
MHz
Capacitancia de salida (Cc): 95
pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta:
SOT223
PBSS302NZ
Datasheet (PDF)
..1. Size:164K philips
pbss302nz.pdf 
PBSS302NZ20 V, 5.8 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c
..2. Size:281K nxp
pbss302nz.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.1. Size:136K philips
pbss302nd.pdf
PBSS302ND40 V, 4 A NPN low VCEsat (BISS) transistorRev. 02 18 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PD.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou
6.2. Size:188K philips
pbss302nx.pdf
PBSS302NX20 V, 5.3 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PX.1.2 Features Low collector-emitter saturation voltage VCEsa
6.3. Size:126K nxp
pbss302nd.pdf
PBSS302ND40 V, 4 A NPN low VCEsat (BISS) transistorRev. 02 18 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PD.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou
6.4. Size:305K nxp
pbss302nx.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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