PBSS302NZ Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS302NZ

Código: S302NZ

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 95 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT223

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PBSS302NZ datasheet

 ..1. Size:164K  philips
 pbss302nz.pdf pdf_icon

PBSS302NZ

PBSS302NZ 20 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS302PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 ..2. Size:281K  nxp
 pbss302nz.pdf pdf_icon

PBSS302NZ

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:136K  philips
 pbss302nd.pdf pdf_icon

PBSS302NZ

PBSS302ND 40 V, 4 A NPN low VCEsat (BISS) transistor Rev. 02 18 February 2008 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS302PD. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou

 6.2. Size:188K  philips
 pbss302nx.pdf pdf_icon

PBSS302NZ

PBSS302NX 20 V, 5.3 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS302PX. 1.2 Features Low collector-emitter saturation voltage VCEsa

MOSTRAR MÁS

Otros transistores... PBSS301ND, PBSS301NX, PBSS301NZ, PBSS301PD, PBSS301PX, PBSS301PZ, PBSS302ND, PBSS302NX, 13005, PBSS302PD, PBSS302PX, PBSS302PZ, PBSS303ND, PBSS303NX, PBSS303NZ, PBSS303PD, PBSS303PX