PBSS302NZ Todos los transistores

 

PBSS302NZ . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS302NZ
   Código: S302NZ
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 5.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 95 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT223
 

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PBSS302NZ Datasheet (PDF)

 ..1. Size:164K  philips
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PBSS302NZ

PBSS302NZ20 V, 5.8 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 ..2. Size:281K  nxp
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PBSS302NZ

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:136K  philips
pbss302nd.pdf pdf_icon

PBSS302NZ

PBSS302ND40 V, 4 A NPN low VCEsat (BISS) transistorRev. 02 18 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PD.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou

 6.2. Size:188K  philips
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PBSS302NZ

PBSS302NX20 V, 5.3 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PX.1.2 Features Low collector-emitter saturation voltage VCEsa

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