PBSS303NX Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS303NX

Código: *5D

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.1 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 130 MHz

Capacitancia de salida (Cc): 60 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT89

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PBSS303NX datasheet

 ..1. Size:126K  nxp
 pbss303nx.pdf pdf_icon

PBSS303NX

PBSS303NX 30 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 01 23 August 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS303PX. 1.2 Features Low collector-emitter saturation voltage VCEsat

 6.1. Size:175K  nxp
 pbss303nd.pdf pdf_icon

PBSS303NX

PBSS303ND 60 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 14 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS303PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

 6.2. Size:152K  nxp
 pbss303nz.pdf pdf_icon

PBSS303NX

PBSS303NZ 30 V, 5.5 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS303PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 7.1. Size:191K  nxp
 pbss303pd.pdf pdf_icon

PBSS303NX

PBSS303PD 60 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS303ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cur

MOSTRAR MÁS

Otros transistores... PBSS301PZ, PBSS302ND, PBSS302NX, PBSS302NZ, PBSS302PD, PBSS302PX, PBSS302PZ, PBSS303ND, NJW0281G, PBSS303NZ, PBSS303PD, PBSS303PX, PBSS303PZ, PBSS304ND, PBSS304NX, PBSS304NZ, PBSS304PD